If you happen to be searching for top-caliber Microcircuit Memory components like part number K6T1008C2EDB7000 by Samsung Semiconductor Inc, Aero Spares 360 is here to serve as your premier distribution partner. The NSN 5962014082869, among others, is readily available for purchase at any time on our database, so do not hesitate to browse through our offerings to see how we can meet your operational requirements. When you discover items of interest like part number K6T1008C2EDB7000, be sure to take advantage of our Request for Quote service to receive competitive quotes for your comparisons. All you need to do is fill out the form provided on this page, making sure to include relevant details like your budget parameters and desired part quantities. With this information, our skilled account managers will quickly craft a customized solution that meets your needs and restrictions alike.
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At Aero Spaces, quality is the cornerstone of our operations, and we go to great lengths to guarantee the unmatched caliber of our offerings. For example, every part in our inventory has been sourced from leading manufacturers that we have vetted and placed on our Approved Vendor List (AVL), such as Samsung Semiconductor Inc with the CAGE Code 0DUN9. We even subject countless components to rigorous quality assurance measures to guarantee their fit, form, and function prior to purchase. Moreover, we organize our stock using Federal Supply Classes (FSCs) to make searching for parts under the FSC 5962 Microcircuits Electronic simple. Get started today to receive a quote on part number K6T1008C2EDB7000 with the NSN 5962014082869 and/or any other items of interest, and our team will be more than happy to help you however necessary!
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-408-2869 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 014082869 | N | B | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| B | A | 0 | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| UPD431000ACZ-70L | 5 | 2 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | +0.0 TO 70.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | REMOTE TERMINAL UNIT, WLB-RTU (1 TO 10)" |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT" |
| CQSJ | INCLOSURE MATERIAL | PLASTIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| FEAT | SPECIAL FEATURES | 128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY" |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | +0.0 TO 70.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | REMOTE TERMINAL UNIT, WLB-RTU (1 TO 10)" |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT" |
| CQSJ | INCLOSURE MATERIAL | PLASTIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| FEAT | SPECIAL FEATURES | 128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY" |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS" |
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